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CN107109132A 化学机械抛光(CMP)组合物在抛光包含钴和/或钴合金的基材中的用途 有权

化学机械抛光(CMP)组合物在抛光包含钴和/或钴合金的基材中的用途
Abstract:
本发明涉及化学机械抛光(CMP)组合物(Q)在化学机械抛光包含(i)钴和/或(ii)钴合金的基材(S)中的用途，其中该CMP组合物(Q)包含：(A)无机颗粒，(B)具有通式(I)的经取代四唑衍生物，其中R1为H、羟基、烷基、芳基、烷芳基、氨基、羧基、烷基羧基、硫基或烷硫基，(C)至少一种氨基酸，(D)至少一种氧化剂，(E)含水介质，且其中该CMP组合物(Q)的pH为7至10。
Abstract(English):

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

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