The invention provides a structure of a semiconductor device. The structure comprises a semiconductor substrate, an inner metal layer is arranged on the semiconductor substrate, a top metal layer is arranged on the inner metal layer and includes first and second parts, the first part covers the inner metal layer completely, the second part surrounds the first part and is separated from the first part, and a passivation layer is arranged on the top metal layer, and includes hollowed patterns so as to expose the top metal layer. The hollowed patterns can be laid out in different manners, the layout manners can be used to reduce the pressure caused by the passivation layer, and the top metal layer is arranged under the hollowed patterns of the passvation layer so as to protect components thereunder. In addition, the top metal layer laid out in strip, sheet or annular shape serves as a buffer structure between the passivation layer and the semiconductor substrate, anisotropic pressure generated in post technologies can be reduced, and components in the lower layers are avoided from generating a piezoresistive effect.