The present invention regards a device intrinsically designed to resonate (2), suitable for RF power transfer, particularly usable for the production of plasma and electrically connectable downstream of a radio frequency power supply (3) with fixed or variable frequency, comprising at least one inductive element (Lp), which can be powered, during use, by such at least one power supply (3); at least one capacitive element (Cp) electrically connected at the terminals of such at least one inductive element (Lp); such at least one device (2) having a resonance angular frequency equal to a formula shown in the description. The capacitive element (Cp) and the inductive element (Lp) have values such that, at resonance state, they provide an equivalent impedance, measured at the terminals of such device (2), substantially of resistive type and much greater than the value of the parasitic impedance upstream of such terminals of such device (2), such that the effect of such parasitic impedance is, during use, substantially negligible.