The invention provides a method for forming top electrode vias of a magnetic random access memory. The method comprises the following steps of (S1) providing a substrate comprising bottom electrodes, a first dielectric layer, MTJ structure units, top tantalum electrodes and a second dielectric layer; (S2) sequentially forming a silicon nitride film layer, a top electrode via etching barrier layer and a third dielectric layer on the substrate; (S3) graphically transferring patterns of the top electrode vias to the third dielectric layer; (S4) etching the third dielectric layer, removing residual organic matters in graphical transfer and transferring the patterns to the etching barrier layer; (S5) etching the etching barrier layer; (S6) etching the silicon nitride layer; (S7) removing the residual organic matters; (S8) forming diffusion blocking layers on inner walls of the top electrode vias; (S9) filling the top electrode vias with copper or tungsten and grinding fillers by adopting CMP. According to the method, the risk of short circuits of the top electrode vias and the MTJ units of a magnetic random access memory circuit is effectively reduced.