The invention provides a semiconductor device fabrication method. The fabrication method comprises the following steps of A, processing an ITO transparent conductive substrate in advance; B, forming agroove in a transparent conductive film of the ITO transparent conductive substrate; C, washing a mixed solution for forming the groove with deionized water, and drying the substrate with nitrogen; D, continuously placing the substrate on a printing platform, and printing zinc oxide ink at a groove position; and E, finally, placing the substrate in a protection atmosphere for thermal annealing at300 DEG C, and completing device fabrication. The fabrication method is simple, and is low in cost and high in operability; the ITO groove is formed by employing a printing method; and compared witha traditional method for fabricating an electrode pattern employing a method of a conductive layer by pattern photoetching and acid corrosion, the fabrication method has the advantage that a large amount of corrosion liquid is prevented from being discharged to cause pollution.