The invention provides a magnetic control element and a magnetron sputtering device. The magnetic control element includes a closed magnetron and a non-closed magnetron. A closed plasma path is formedbetween an internal magnetic pole and an external magnetic pole of the closed magnetron. A non-closed plasma path is formed between a first magnetic pole and a second magnetic pole of the non-closedmagnetron. The closed plasma path and the non-closed plasma path are used for at least correspondingly covering the radius area from the center of a target to the edge of the target. With the magneticcontrol element, a target can be fully corroded, no particle appears in the center area of the target, and the utilization rate of the target is improved. Moreover, the ionization rate of a metallictarget in the sputtering process can be improved, and the filling effect of a through-hole on a wafer is improved.