The invention discloses a conveying method of a back surface injection technology for a thinned silicon wafer. The conveying method comprises the following steps of S1, providing a silicon wafer whichis thinned by a taiko thinning technology; S2, placing the front surface of the silicon wafer onto an electrostatic chuck; setting the electrostatic chuck as follows: S21, setting the position of a discharging needle, enabling the discharging needle to directly touch a support ring, and ensuring that the discharging needle is completely in contact with the non-contact position of the front surface of the silicon wafer; S22, setting the power source voltage mode of the electrostatic chuck by a method of reducing primary bounce quantity and eliminating secondary bounce quantity; S3, according to the setting power source voltage mode, setting the power source voltage, and completing the ion injection at the back surface; S4, fetching out the wafer. The conveying method has the advantage thatthe primary bounce quantity is reduced, the secondary bounce quantity is eliminated, and the electrostatic residues before wafer fetching can be eliminated, so as to avoid the falling of the wafer inthe conveying process after the ion injection at the back surface of the silicon wafer is completed.