Disclosed in an embodiment is a semiconductor device, comprising: a light emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of recesses penetrating the second conductive semiconductorlayer and the active layer and disposed to a partial region of the first conductive semiconductor layer; a plurality of first electrodes disposed within the plurality of recesses and electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein a ratio of a first area where the plurality of first electrodes are in contact with the first conductive semiconductor layer to a second area where the second electrode is in contact with the second conductive semiconductor layer (the first area :the second area) is 1:3 to 1:10.