The invention belongs to the technical field of photoelectric sensing and provides an embedded grating structure-based narrow-band near-infrared thermo-electronic photoelectric detector. The inventionaims to solve the problem of the low responsivity of a photoelectric detector in the prior art. The embedded grating structure-based narrow-band near-infrared thermo-electronic photoelectric detectorcomprises a silicon substrate and a metal grating, a titanium film is arranged between the metal grating and the silicon substrate so as to serve as an adhesive layer; the metal grating is connectedto a top conductive electrode; and a bottom conductive electrode is arranged on a silicon back surface. The metal grating is embedded into the silicon substrate, so that the light absorption efficiency of metal and the generation rate of hot electrons are improved, and the thermalization loss of the hot electrons is reduced; a Schottky interface on the side surface of the grating is additionally adopted, so that the collection efficiency of the hot electrons transferred into silicon is improved, and therefore, the responsivity of the photoelectric detector is improved; and the response wavelength of the detector can be changed by adjusting the period of the metal grating, so that the wavelength-adjustable near-infrared photoelectric detector is achieved.