Invention Publication
EP1717861A1 Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
有权
Vertikaler MOSFET晶体管Als Auswahl晶体管fürnichtflüchtigeSpeichereinrichtung betrieben
- Patent Title: Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
- Patent Title (中): Vertikaler MOSFET晶体管Als Auswahl晶体管fürnichtflüchtigeSpeichereinrichtung betrieben
-
Application No.: EP05425261.4Application Date: 2005-04-27
-
Publication No.: EP1717861A1Publication Date: 2006-11-02
- Inventor: Pellizzer, Fabio , Pirovano, Agostino
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: Via C. Olivetti, 2 20041 Agrate Brianza (Milano) IT
- Agency: Cerbaro, Elena
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L21/336 ; H01L29/78
Abstract:
A vertical MOSFET transistor, formed in a body (13) of semiconductor material having a surface and housing a buried conductive region (19) of a first conductivity type; a channel region (29) of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region (26, 35c) of the first conductivity type, arranged on top of the channel region (29) and the buried conductive region (19); a gate insulation region (22), extending at the sides of and contiguous to the channel region (29); and a gate region (23, 35d) extending at the sides of and contiguous to the gate insulation region (22).
Public/Granted literature
- EP1717861B1 Vertical MOSFET transistor operating as a selector in nonvolatile memory devices Public/Granted day:2010-08-25
Information query
IPC分类:
