Invention Publication
- Patent Title: WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE
- Patent Title (中): 密封粘结对于随着金属合金晶片级
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Application No.: EP06844592.3Application Date: 2006-11-29
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Publication No.: EP1961036A1Publication Date: 2008-08-27
- Inventor: CARLSON, Gregory, A. , ERLACH, David, M. , PARANJPYE, Alok , SUMMERS, Jeffery, F.
- Applicant: Innovative Micro Technology , Carlson, Gregory A. , Erlach, David M. , Paranjpye, Alok , Summers, Jeffrey F.
- Applicant Address: 75 Robin Hill Road Goleta, CA 93117 US
- Assignee: Innovative Micro Technology,Carlson, Gregory A.,Erlach, David M.,Paranjpye, Alok,Summers, Jeffrey F.
- Current Assignee: Innovative Micro Technology,Carlson, Gregory A.,Erlach, David M.,Paranjpye, Alok,Summers, Jeffrey F.
- Current Assignee Address: 75 Robin Hill Road Goleta, CA 93117 US
- Agency: Jennings, Nigel Robin
- Priority: US304601 20051216
- International Announcement: WO2007078472 20070712
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate, along with a raised feature formed on the first or the second substrate. At least one of the metal layers may be deposited conformally over the raised feature. The raised feature penetrates the molten material of the first or the second metal layers during formation of the alloy, and produces a spectrum of stoichiometrics for the formation of the desired alloy, as a function of the distance from the raised feature. At some distance from the raised feature, the proper ratio of the first metal to the second metal exists to form an alloy of the preferred stoichiometry.
Public/Granted literature
- EP1961036B1 WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE Public/Granted day:2016-07-20
Information query
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