Invention Patent
ITMI910836D0
未知
- Patent Title:
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Application No.: ITMI910836Application Date: 1991-03-28
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Publication No.: ITMI910836D0Publication Date: 1991-03-28
- Inventor: FRISINA FERRUCCIO , FERLA GIUSEPPE
- Applicant: CONS RIC MICROELETTRONICA , SGS THOMSON MICROELECTRONICS
- Assignee: CONS RIC MICROELETTRONICA,SGS THOMSON MICROELECTRONICS
- Current Assignee: CONS RIC MICROELETTRONICA,SGS THOMSON MICROELECTRONICS
- Priority: ITMI910836 1991-03-28
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L29/73 ; H01L21/322 ; H01L21/331 ; H01L21/8222 ; H01L27/07 ; H01L27/082 ; H01L29/732 ; H01L29/861 ; H01L
Abstract:
The structure consists of a single chip (1) of semiconductor material, which comprises an area (32) having a high lifetime of the minority carriers, which constitutes a bipolar power device with high current density, and at least one area (20, 21; 20', 21') with a reduced lifetime of the minority carriers, which constitutes a fast diode.
Public/Granted literature
- IT1245365B Public/Granted day:1994-09-20
Information query
IPC分类:
