PURPOSE: To stabilize the accumulation of information with lapse of time by enabling the selective removal of atoms from a solid surface without changing the lattice structure of the remaining atoms at the time of labeling the discrete atoms or atom groups including compds. or completely intimately mixed allays on the solid surface. CONSTITUTION: A high information density is obtd. by storing the information on the atom regions at the time of storing or writing information units. Namely, erasure is made possible again by recombining vacancy to the atoms or atom groups, by which the restoration of the original state is made possible. The recombination is effected on the surface of the solid and more particularly the semiconductor layer of doped chalcogenide, etc., to this size, for example, by using the needle-like electrode of a sensitive surface scanning probe of a scanning tunnel microscope or scanning atomic microscope and applying a short time of an electric field or magnetic field to the surface. The max. limit electric field surface of the semiconductor layer surface of this kind of the probe is 10 to 0.1nm and, therefore, a linear influence is exerted on the electron structure and the desorption of the specific one kind of the atoms is made possible.