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公开(公告)号:JPH05221957A
公开(公告)日:1993-08-31
申请号:JP21130692
申请日:1992-08-07
Applicant: BASF AG
Inventor: HAARARUTO KERAA , BUORUFUGANGU SHIYUREPU , HAARARUTO FUKUSU
IPC: C07C319/20 , C07C323/03 , C07C323/12 , C07C323/25 , C07C323/52 , C07C323/66 , C07D209/48 , C23C22/02 , C23C22/05 , C23F11/16
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公开(公告)号:JPH095338A
公开(公告)日:1997-01-10
申请号:JP2375896
申请日:1996-02-09
Applicant: BASF AG
Inventor: DEIITAA HORUN , HAARARUTO KERAA , BUORUFUGANGU SHIYUREPU , SABURI AKARI
Abstract: PROBLEM TO BE SOLVED: To form chemically distinguished pictures under a scanning atomic power microscope by using a chemically denatured probe which forms pictures in a vertical force mode, an elastic mode, a tapping mode, and non-contact mode. SOLUTION: The tip 4 of a probe is coated with a vapor-deposited metallic coating layer 6 and a thiocarboxylic acid layer 7 which is formed by absorption from a liquid phase by utilizing a thiol radical having affinity with the gold of the layer 6. Consequently, a stable 'acidic tip' for detecting basic group and hydrogen bridge is formed. An assay sample 5 is set below the acidic tip. The sample 5 is first coated with butyl trimethoxysilane having a methyl end group, and then, the uncoated part of the sample 5 is coated with buthyl trimethoxysilance having an amino end group by dipping the sample 5 in the solution of the buthyl trimethoxysilane. Therefore, a chessboard-like pattern is formed of the silane monomolecular layers having the methyl and amino end groups.
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公开(公告)号:JPH0847666A
公开(公告)日:1996-02-20
申请号:JP5705895
申请日:1995-03-16
Applicant: BASF AG
Inventor: HAARARUTO KERAA , GEERUHARUTO HOFUMAN , BUARUTAA DENTSUINGAA , RAINAA FUESURAA
IPC: B05D3/10 , B05D7/14 , C08L39/00 , C09D139/00 , C25D13/20
Abstract: PURPOSE: To improve adhesive property and corrosion resistant protection effect and reduce corrosion of an under layer of a coating by treating metal surface with an aqueous solution of an amino containing organic polymer in the case of performing modification treatment of cleaned or chemically pretreated metal surface with an organic polymer aqueous solution. CONSTITUTION: Cleaned or chemically pretreated metal surface is treated by an aqueous solution of an amino containing organic polymer and is coated with a thin layer of this polymer. Here, for the amino containing organic polymer, the one expressed by the formula is used. R , R in the formula can be same or different and each contains H or a unit meaning an alkyl with carbon atom number of 1-6, or a hydrolysis product of a polymer comprising this unit is used. Further, the modified metal surface is used for coating by cathodic electrodeposition. Consequently, adhesive property and corrosion resistant coating effect for the coating material are improved, and an under layer corrosion of the coating can be reduced.
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公开(公告)号:JPH08291183A
公开(公告)日:1996-11-05
申请号:JP9286696
申请日:1996-04-15
Applicant: BASF AG
Inventor: HORUGAA FURIIDORITSUHI , HAARARUTO KERAA , BERUNTO ROITONAA
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公开(公告)号:JPH06103619A
公开(公告)日:1994-04-15
申请号:JP15727691
申请日:1991-06-28
Applicant: BASF AG
Inventor: HAARARUTO FUKUSU , TOOMASU SHIMERU , HAARARUTO KERAA
IPC: G01R33/10 , B82B3/00 , G01Q60/00 , G01Q80/00 , G01R33/12 , G11B9/00 , G11B9/14 , G11C13/00 , G11C13/02 , H01J37/28
Abstract: PURPOSE: To stabilize the accumulation of information with lapse of time by enabling the selective removal of atoms from a solid surface without changing the lattice structure of the remaining atoms at the time of labeling the discrete atoms or atom groups including compds. or completely intimately mixed allays on the solid surface. CONSTITUTION: A high information density is obtd. by storing the information on the atom regions at the time of storing or writing information units. Namely, erasure is made possible again by recombining vacancy to the atoms or atom groups, by which the restoration of the original state is made possible. The recombination is effected on the surface of the solid and more particularly the semiconductor layer of doped chalcogenide, etc., to this size, for example, by using the needle-like electrode of a sensitive surface scanning probe of a scanning tunnel microscope or scanning atomic microscope and applying a short time of an electric field or magnetic field to the surface. The max. limit electric field surface of the semiconductor layer surface of this kind of the probe is 10 to 0.1nm and, therefore, a linear influence is exerted on the electron structure and the desorption of the specific one kind of the atoms is made possible.
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