PROBLEM TO BE SOLVED: To provide a vapor growth apparatus capable of performing the vapor growth (especially MOCVD) by a simple constitution by installing plural vapor growing parts in parallel through opening and closing bulbs to general feeding parts of raw materials when vapor growing from plural base plates. SOLUTION: This vapor growth apparatus, especially an organometallic vapor phase growing apparatus is constituted by installing plural vapor growing reaction parts (constituted of reaction furnaces F and heating means 6) connected through opening and closing bulbs V1 G, V2 G, V3 G,... to general feeding parts 10 of raw materials (composed of a carrier gas resource 2, an organometal resource 1 and a raw gas resource 4). Thereby, the crystalline growths on plural base plates 30 on which crystals are grown from vapor can be performed by the vapor grow apparatus with a simple constitution in good operability, and thereby improvement of mass-productiveness and lowering of a installation cost become possible.