公开(公告)号：JPH10116790A

公开(公告)日：1998-05-06

申请号：JP27104796

申请日：1996-10-14

Applicant: SONY CORP

Inventor： ISHIKAWA HIDETO ,  YAMAMOTO SUNAO ,  IMANISHI DAISUKE ,  SATO HIROMICHI

IPC: C30B25/14 ,  F17C13/08 ,  F17D1/02 ,  F24F7/06 ,  H01L21/02 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor growth device, an emergency gas processing system, and an emergency gas processing method which sufficiently ensure safety in case of emergency and enable simplification of facilities. SOLUTION: In a semiconductor growth device 1, a cylinder cabinet 2 provided with a specified high-pressure gas used as a material and adapted for controlling opening/closing is located in a chamber which is a gas supply/ exhaust system separated from a growing device body 3 of the semiconductor growing device 1 and independent of the growing device body 3. With respect to this semiconductor growth device, a casing exhaust gas of the cylinder cabinet 2 connected to an emergency gas processing device 21 is fed to a normal gas processing device in normal operation. In case of emergency, a pipe 23 of normal exhaust is shut down and switched to a pipe to the emergency gas processing device 21, thus carrying out gas processing.

公开(公告)号：JPH09306851A

公开(公告)日：1997-11-28

申请号：JP14076596

申请日：1996-05-10

Applicant: SONY CORP

Inventor： ISHIKAWA HIDETO

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a decompression exhaust system and decompression vapor- phase treating apparatus good in pressure controllability and high in safety and availability of the apparatus. SOLUTION: A decompression exhaust system having a vacuum pump 2 with a butterfly valve 1 and two exhaust units having mutually connected intakes is connected to a reactor 11 of a decompression MOCVD(metal org. compd. chemical vapor deposition) apparatus. For controlling the growth pressure in the reactor 11 being evacuated, both exhaust units are used at the same time. If required, an N2 gas is fed into exhausting pipings 3 at the upstream of the valves 1 of the exhaust units to reduce nearly to zero between the pressure difference at both exhaust nits. In other example, a similar decompression exhaust system is connected to two or more reactors 11 of a decompression MOCVD apparatus.

公开(公告)号：JPH0572152A

公开(公告)日：1993-03-23

申请号：JP26286891

申请日：1991-09-13

Applicant: SONY CORP

Inventor： MIWA SHIRO ,  ISHIKAWA HIDETO ,  NOMACHI ICHIRO ,  MARUYAMA TOSHISUKE

IPC: G01N23/225

Abstract: PURPOSE:To analyze the impurity on the surface of a substrate in quantitatively with high precision by forming a cap layer having the same composition to that of a compound semiconductor substrate on the substrate and carrying out the secondary ion mass spectrometry. CONSTITUTION:A cap layer 3 which essentially has the same composition to that of a substrate 1 is formed on a compound seeconductor substrate 1, and the secondary ion mass spectrometry is carried out from the surface of the cap layer 3 at least to the interface between the cap layer 3 and the substrate 1. Further, a contaminating impurity layer 2 is formed on the substrate 1, and the thickness of the cap layer 3 is set to about 100-300mum in order to prevent the peak of the impurity which is obtained by the analysis from being too broad and prevent the initial effect from being suppressed insufficiently. Accordingly, the impurity on the surface of the substrate 1 can be analyzed quantitatively with high precision.

公开(公告)号：JPH03232514A

公开(公告)日：1991-10-16

申请号：JP2887890

申请日：1990-02-08

Applicant: CHIYODA CHEM ENG CONSTRUCT CO ,  SONY CORP

Inventor： HASHIMOTO HIDEO ,  KUDO HIDEHIKO ,  IWAMOTO NORIO ,  HOSHINO NOBUKO ,  KAWAI HIROHARU ,  ISHIKAWA HIDETO ,  MORI YOSHIFUMI

IPC: B01D47/00

Abstract: PURPOSE:To prevent the fluctuations of the waste gas pressure at the outlet and inlet of a jet scrubber by incorporating the scrubber having a gas suction port as its open end into a dust collecting tank. CONSTITUTION:A spray nozzle 34 communicating with a line 32 for a pressurized liq. current and a jet scrubber 37 having a gas suction port 38 opened in a dust collecting tank 30 are vertically set in the tank 30. A waste gas line 33 for the dust-free gas is provided at the upper end of the tank 30 and a waste liq. line 39 at the bottom. The waste liq. line 39 is connected to the line 32. Consequently, the waste gas pressure is not fluctuated at the outlet and inlet. Accordingly, the dust collector is appropriately used as the one for the waste gas from the harmful gas source of the semiconductor production device, etc., in which pressure fluctuations are strictly prohibited.

公开(公告)号：JPH02103311A

公开(公告)日：1990-04-16

申请号：JP25561488

申请日：1988-10-11

Applicant: CHIYODA CHEM ENG CONSTRUCT CO ,  SONY CORP

Inventor： YONEDA NORIYUKI ,  KUDO HIDEHIKO ,  IWAMOTO NORIO ,  NAKAMURA MUNEKAZU ,  KOJIMA CHIAKI ,  KANEKO KUNIO ,  MORI YOSHIFUMI ,  ISHIKAWA HIDETO

IPC: F23G7/06 ,  B01D47/06 ,  B01D53/34 ,  B01D53/46 ,  H01L21/205

Abstract: PURPOSE:To reduce the quantity of a flue gas and facilitate the disposal thereof by using oxygen gas of a specific concentration as a combustion-supporting gas, specifying the quantity of noncombustible gas introduced into the furnace, burning a poisonous flue gas, bringing the combustion gas in contact with the cooling surface of a solid, and furthermore apply a spray of waterdrops to the combustion gas prior to discharging. CONSTITUTION:The poisonous gases to which the present method of disposal is applicable are compounds of arsine, phosphine, and the like which produce solid fine powders by combustion. Oxygen gas with a concentration of 60 vol.% or larger is used as a combustion-supporting gas. The total of the noncombustible gases including combustion-supporting gas and ventilating gas, which are introduced into the furnace, should be 4 vol. parts or less per vol. part of poisonous exhaust gas. When secondary oxygen is put in through a pipe 23, primary oxygen through a pipe 22, and a poisonous flue gas through a pipe 21 for the combustion, a combustion gas containing solid fi powder is produced. When the product is cooled by means of a cooling surface 15 and waterdrops from a spray nozzle 30, the solid fine powder is captured and absorbed by condensed water and waterdrops and discharged out of the furnace together with combustion exhaust through a drainpipe 13. This method facilitates the disposal of the title gas.

公开(公告)号：JPH01241817A

公开(公告)日：1989-09-26

申请号：JP7024888

申请日：1988-03-24

Applicant: SONY CORP

Inventor： ISHIKAWA HIDETO ,  KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L29/778 ,  H01L29/80

Abstract: PURPOSE:To obtain a semi-insulating AlInAs crystal film of high resistance, excellent in crystallinity, by Fe doping at the time of a crystal growth of AlInAs. CONSTITUTION:A buffer layer 3 by semi-insulating AlInAs, a channel layer 4 by undoped GaInAs, a spacer layer 5 by undoped AlInAs and an n-AlInAs layer 6 are formed in turn on a semi-insulating InP substrate 2 by a MOCVD method. A gate electrode 7, a source electrode 8, and a drain electrode 9 and formed on the n-AlInAs layer 6. A two-dimensional electron gas 10 is formed in the undoped channel layer 4 of GaInAs. It is formed in this way. Since the thickness of the channel layer 3 is thin 100Angstrom or thereabouts at the current design value, if it is grown in an InP substrate 2 directly, one with excellent crystallization cannot be obtained owing to an influence of the substrate 2. To eliminate the influence of the substrate 2 and form a highly crystalline channel layer, a buffer layer is interposed. Therefore, for a buffer layer, it must by formed as thin as possible in order to eliminate the influence of a substrate to a channel layer.

公开(公告)号：JPS6251283A

公开(公告)日：1987-03-05

申请号：JP19172085

申请日：1985-08-30

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  ISHIKAWA HIDETO ,  MORI YOSHIFUMI

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/36 ,  H01S5/00 ,  H01S5/343

Abstract: PURPOSE:To obtain a highly efficient semiconductor layer, which can specify a current path without providing a special means such as a current narrowing region, by providing clad layers in specified super-lattice structures, and providing the narrowing effect of the current path by the transmission anisotropy of said structure. CONSTITUTION:Neighboring clad layers 2 and 4, which hold an active layer 3, are formed by semiconductor layers having super-lattice structures, wherein a plurality of different semiconductor forming material layers L1, L2,... each having eight atomic layers, are alternately grown epitaxially. An electrode 7 is locally provided in correspondence with transmission anisotropy and the light emitting region of said suer-lattice structure. A current narrowing effect is obtained in the light emitting region together with the electrode 1. For example, the first and second clad layers 2 and 4 are formed by an AlAs layer and a GaAs layer, in which n-type and p-type impurities are doped, respectively, at a ratio of (AlAs)n and (GaAs)m. Each has 1-6 atomic layers, i.e., both (n) and (m) are made to be 1-6. The super-lattice structure comprises very thin semiconductor material layrs, each having said ratio. Thus, the current path can be restricted to a part directly beneath the electrode deposited part only by forming the clad layers in the super-lattice structure. Heat from a light emitting part can be effectively radiated.

公开(公告)号：JPH10199958A

公开(公告)日：1998-07-31

申请号：JP479197

申请日：1997-01-14

Applicant: SONY CORP

Inventor： TANAKA SADAO ,  ISHIKAWA HIDETO ,  YAMAMOTO SUNAO ,  IMANISHI DAISUKE

IPC: B65G49/07 ,  H01L21/205 ,  H01L21/677 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To facilitate wafer setting, wafer pick up and wafer supported setting to a stage, without touching the support, etc., by providing a vertically movable wafer support stage having drawable bearings for mounting a wafer support. SOLUTION: A wafer support stage, i.e., a susceptor stage 21 has drawable bearings 23 arranged vertically in a longitudinal long frame-like support 22. Each bearing 23 for mounting a susceptor 24 thereon has each both side edges fitted in guide grooves formed into the inner sidewalls of the support 22, so as to smoothly draw and insert through adequate means, e.g. rollers and an approximately U-shape opened at the rear with a step 27 for directly receiving the susceptor 24. The entire stage 21 is connected to a vertical movable mechanism.

公开(公告)号：JPH1092913A

公开(公告)日：1998-04-10

申请号：JP24654996

申请日：1996-09-18

Applicant: SONY CORP

Inventor： ISHIKAWA HIDETO

IPC: H01L21/683 ,  H01L21/205 ,  H01L21/22 ,  H01L21/31 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To reduce the cost of consumable components as a susceptor by providing a structure dividable into two or more segments. SOLUTION: A susceptor 21 for heating and holding a semiconductor in a semiconductor growing apparatus has a structure dividable into two or more segments. A high-purity C-made susceptor 21 is composed of e.g. a thin disk-like substrate holder 22 for holding a substrate and circular columnar support 23 for removably supporting the holder 22. The support 23 has a diameter equal to that of the holder 22. The holder 22 has a protrusion 24 at the bottom surface center, the support 23 has a recess 25 at the top surface center, the protrusion 24 is coupled with the recess 25 to unify the support 23 with the holder 22 and removed from the recess 25 to separate the support 23 from the holder 22.

公开(公告)号：JPH1036189A

公开(公告)日：1998-02-10

申请号：JP19094896

申请日：1996-07-19

Applicant: SONY CORP

Inventor： YAMAMOTO SUNAO ,  ISHIKAWA HIDETO

IPC: C30B25/08 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a vapor growth apparatus capable of performing the vapor growth (especially MOCVD) by a simple constitution by installing plural vapor growing parts in parallel through opening and closing bulbs to general feeding parts of raw materials when vapor growing from plural base plates. SOLUTION: This vapor growth apparatus, especially an organometallic vapor phase growing apparatus is constituted by installing plural vapor growing reaction parts (constituted of reaction furnaces F and heating means 6) connected through opening and closing bulbs V1 G, V2 G, V3 G,... to general feeding parts 10 of raw materials (composed of a carrier gas resource 2, an organometal resource 1 and a raw gas resource 4). Thereby, the crystalline growths on plural base plates 30 on which crystals are grown from vapor can be performed by the vapor grow apparatus with a simple constitution in good operability, and thereby improvement of mass-productiveness and lowering of a installation cost become possible.