Invention Grant
- Patent Title: Fin-type field effect transistor and method of forming the same
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Application No.: US14936370Application Date: 2015-11-09
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Publication No.: US10068963B2Publication Date: 2018-09-04
- Inventor: Huai-Tzu Chiang , Sheng-Hao Lin , Hao-Ming Lee , Yu-Ru Yang , Shih-Hsien Huang , Chien-Hung Chen , Chun-Yuan Wu , Cheng-Tzung Tsai
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: TW104132649A 20151002
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16 ; H01L29/161 ; H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L21/225 ; H01L21/768
Abstract:
Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at least one fin includes, from bottom to top, a seed layer, a stress relaxation layer and a channel layer. The at least one gate is across the at least one fin. A method of forming a FinFET is further provided.
Public/Granted literature
- US20170098692A1 FIN-TYPE FIELD EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME Public/Granted day:2017-04-06
Information query
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