Invention Grant
- Patent Title: Substrate processing method, substrate processing apparatus and recording medium
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Application No.: US15471360Application Date: 2017-03-28
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Publication No.: US10096465B2Publication Date: 2018-10-09
- Inventor: Keisuke Yoshida
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2016-076610 20160406
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B05C9/14 ; B05C11/10 ; B05D3/02 ; B05D3/06 ; H01L21/32 ; C23C18/12 ; H01L21/67 ; H01L21/687
Abstract:
A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer, heating the liquid film at a first temperature lower than a crosslinking temperature of the compound, and irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature.
Public/Granted literature
- US20170294303A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM Public/Granted day:2017-10-12
Information query
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