Invention Grant
- Patent Title: Aluminum content control of TiAIN films
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Application No.: US15462214Application Date: 2017-03-17
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Publication No.: US10170321B2Publication Date: 2019-01-01
- Inventor: Wenyu Zhang , Wei V. Tang , Yixiong Yang , Chen-Han Lin , Yi Xu , Yu Lei , Naomi Yoshida , Lin Dong , Drew Phillips , Srividya Natarajan , Atashi Basu , Kaliappan Muthukumar , David Thompson , Paul F. Ma
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C23C14/14 ; C23C12/00 ; H01L29/66 ; H01L29/45 ; H01L21/28 ; H01L29/49
Abstract:
Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.
Public/Granted literature
- US20180269065A1 Aluminum Content Control of TiAIN Films Public/Granted day:2018-09-20
Information query
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