公开(公告)号：US20240249918A1

公开(公告)日：2024-07-25

申请号：US18599767

申请日：2024-03-08

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H05H1/46

CPC classification number: H01J37/32357 ,  C23C16/45536 ,  C23C16/50 ,  H01J37/32422 ,  H01L21/67028 ,  H01L21/67069 ,  H05H1/4652 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/335

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

公开(公告)号：US11955319B2

公开(公告)日：2024-04-09

申请号：US17844245

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H05H1/46

CPC classification number: H01J37/32357 ,  C23C16/45536 ,  C23C16/50 ,  H01J37/32422 ,  H01L21/67028 ,  H01L21/67069 ,  H05H1/4652 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/335

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

公开(公告)号：US20220319837A1

公开(公告)日：2022-10-06

申请号：US17844346

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Yu Lei ,  Dien-Yeh Wu ,  Jallepally Ravi

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  B08B7/00

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

公开(公告)号：US20220319813A1

公开(公告)日：2022-10-06

申请号：US17844245

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  H05H1/46

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

公开(公告)号：US20220270871A1

公开(公告)日：2022-08-25

申请号：US17742712

申请日：2022-05-12

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20180269065A1

公开(公告)日：2018-09-20

申请号：US15462214

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Wei V. Tang ,  Yixiong Yang ,  Chen-Han Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Drew Phillips ,  Srividya Natarajan ,  Atashi Basu ,  Kaliappan Muthukumar ,  David Thompson ,  Paul F. Ma

IPC: H01L21/285 ,  C23C14/14 ,  C23C12/00 ,  H01L29/66 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28556 ,  C23C12/00 ,  C23C14/14 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28568 ,  H01L29/456 ,  H01L29/4966 ,  H01L29/66795

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

公开(公告)号：US12272659B2

公开(公告)日：2025-04-08

申请号：US17944596

申请日：2022-09-14

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yu Lei ,  Zhimin Qi ,  Aixi Zhang ,  Xianyuan Zhao ,  Wei Lei ,  Xingyao Gao ,  Shirish A. Pethe ,  Tao Huang ,  Xiang Chang ,  Patrick Po-Chun Li ,  Geraldine Vasquez ,  Dien-yeh Wu ,  Rongjun Wang

IPC: H01L23/00

Abstract: Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.

公开(公告)号：US12230479B2

公开(公告)日：2025-02-18

申请号：US18599767

申请日：2024-03-08

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H05H1/46

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

公开(公告)号：US11515200B2

公开(公告)日：2022-11-29

申请号：US17110826

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  He Ren ,  Yu Lei ,  Shi You ,  Kazuya Daito

IPC: H01L21/768

Abstract: Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.

公开(公告)号：US20210351032A1

公开(公告)日：2021-11-11

申请号：US16867554

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Keyvan Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/67

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.