Invention Grant
- Patent Title: Method and system for aberration correction in an electron beam system
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Application No.: US15148331Application Date: 2016-05-06
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Publication No.: US10224177B2Publication Date: 2019-03-05
- Inventor: Christopher Sears , Xinrong Jiang , Sameet K. Shriyan
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Suiter Swantz pc llo
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01J37/147

Abstract:
A scanning electron microscopy system is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a sample stage configured to secure a sample. The system includes a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The set of electron-optical elements includes an upper deflector assembly and a lower deflector assembly. The upper deflector assembly is configured to compensate for chromatic aberration in the primary electron beam caused by the lower deflector assembly. In addition, the system includes a detector assembly configured to detect electrons emanating from the surface of the sample.
Public/Granted literature
- US20160329189A1 Method and System for Aberration Correction in an Electron Beam System Public/Granted day:2016-11-10
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