Invention Grant
- Patent Title: Semiconductor devices with same conductive type but different threshold voltages and method of fabricating the same
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Application No.: US15866489Application Date: 2018-01-10
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Publication No.: US10249488B1Publication Date: 2019-04-02
- Inventor: Chih-Kai Hsu , Ssu-I Fu , Chun-Ya Chiu , Chin-Hung Chen , Chi-Ting Wu , Yu-Hsiang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201810004058 20180103
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; H01L29/49 ; H01L29/66 ; H01L29/78 ; H01L21/762 ; H01L27/088 ; H01L29/165
Abstract:
A semiconductor device with three transistors of same conductive type but different threshold voltage is provided in the present invention, wherein the first transistor includes a high-k dielectric layer, a first bottom barrier metal layer, a second bottom barrier metal layer, a work function metal layer and a low resistance metal. The second transistor includes the high-k dielectric layer, the first bottom barrier metal layer, the second bottom barrier metal layer and the low resistance metal, and a third transistor on the substrate. The third transistor includes the high-k dielectric layer, the first bottom barrier metal layer and the low resistance metal.
Information query
IPC分类:
