Invention Grant
- Patent Title: Ion generator and method for using the same
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Application No.: US15692745Application Date: 2017-08-31
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Publication No.: US10319557B2Publication Date: 2019-06-11
- Inventor: Tai-Kun Kao , Tsung-Min Lin , Jen-Chung Chiu , Ren-Dou Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/317 ; C01F17/00

Abstract:
Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.
Public/Granted literature
- US20190066967A1 ION GENERATOR AND METHOD FOR USING THE SAME Public/Granted day:2019-02-28
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