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    Plasma generation for ion implanter
    1.
    发明授权
    Plasma generation for ion implanter 有权

    公开(公告)号：US10163609B2

    公开(公告)日：2018-12-25

    申请号：US15475196

    申请日：2017-03-31

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Tsung-Min Lin ,  Ming-Hsing Li ,  Fang-Chi Chien ,  Chao-Li Shih ,  Hong-Hsing Chou

    IPC: H01J37/00 ,  H01J37/32 ,  H01L21/265

    Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.

    Repellent electrode for electron repelling
    2.
    发明授权
    Repellent electrode for electron repelling 有权

    公开(公告)号：US11295926B2

    公开(公告)日：2022-04-05

    申请号：US16698072

    申请日：2019-11-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

    IPC: H01J37/08 ,  H01J37/32 ,  H01J37/317

    Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

    GAS DELIVERY SYSTEM FOR ION IMPLANTER
    6.
    发明申请
    GAS DELIVERY SYSTEM FOR ION IMPLANTER 有权

    公开(公告)号：US20210366690A1

    公开(公告)日：2021-11-25

    申请号：US16882053

    申请日：2020-05-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hom-Chung LIN ,  Jih-Churng TWU ,  Yi-Ting CHANG ,  Chao-Po LU ,  Tsung-Min Lin

    IPC: H01J37/317 ,  H01J37/08 ,  H01J37/32

    Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

    Repellent electrode for electron repelling
    8.
    发明授权
    Repellent electrode for electron repelling 有权

    公开(公告)号：US12243707B2

    公开(公告)日：2025-03-04

    申请号：US18448026

    申请日：2023-08-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

    IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

    Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

    Gas delivery system for ion implanter
    9.
    发明授权
    Gas delivery system for ion implanter 有权

    公开(公告)号：US11569062B2

    公开(公告)日：2023-01-31

    申请号：US16882053

    申请日：2020-05-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hom-Chung Lin ,  Jih-Churng Twu ,  Yi-Ting Chang ,  Chao-Po Lu ,  Tsung-Min Lin

    IPC: H01J37/31 ,  H01J37/317 ,  H01J37/08 ,  H01J37/32

    Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

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