Invention Grant
- Patent Title: Integrated capacitive humidity sensor
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Application No.: US15053456Application Date: 2016-02-25
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Publication No.: US10336606B2Publication Date: 2019-07-02
- Inventor: Qing Zhang , Mohommad Choudhuri , Gul Zeb
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/085 ; B81B7/00 ; B81C1/00 ; G01N27/22
Abstract:
A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.
Public/Granted literature
- US20170247247A1 Integrated Capacitive Humidity Sensor Public/Granted day:2017-08-31
Information query
IPC分类:
