公开(公告)号：US09704784B1

公开(公告)日：2017-07-11

申请号：US15209964

申请日：2016-07-14

Applicant: Freescale Semiconductor, Inc.

Inventor： Matthieu Lagouge ,  Qing Zhang ,  Mohommad Choudhuri ,  Gul Zeb

IPC: H01L23/48 ,  H01L23/52 ,  H01L21/768 ,  H01L21/288 ,  H01L23/532 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01L23/481 ,  H01L21/2885 ,  H01L21/3065 ,  H01L21/32134 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/53238

Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.

公开(公告)号：US10336606B2

公开(公告)日：2019-07-02

申请号：US15053456

申请日：2016-02-25

Applicant: Freescale Semiconductor, Inc.

Inventor： Qing Zhang ,  Mohommad Choudhuri ,  Gul Zeb

IPC: H01L27/14 ,  H01L27/085 ,  B81B7/00 ,  B81C1/00 ,  G01N27/22

Abstract: A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.

公开(公告)号：US20170247247A1

公开(公告)日：2017-08-31

申请号：US15053456

申请日：2016-02-25

Applicant: Freescale Semiconductor, Inc.

Inventor： Qing Zhang ,  Mohommad Choudhuri ,  Gul Zeb

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81B2201/0214 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/0159 ,  B81C2201/016 ,  B81C2201/019 ,  G01N27/223

Abstract: A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.