公开(公告)号：US10336606B2

公开(公告)日：2019-07-02

申请号：US15053456

申请日：2016-02-25

Applicant: Freescale Semiconductor, Inc.

Inventor： Qing Zhang ,  Mohommad Choudhuri ,  Gul Zeb

IPC: H01L27/14 ,  H01L27/085 ,  B81B7/00 ,  B81C1/00 ,  G01N27/22

Abstract: A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.

公开(公告)号：US10157792B2

公开(公告)日：2018-12-18

申请号：US15335875

申请日：2016-10-27

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Qing Zhang ,  Lianjun Liu

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/532

Abstract: A through substrate via (TSV) and method of forming the same are provided. The method of making the TSV may include etching a via opening into the backside of semiconductor substrate, the via opening exposing a surface of a metal landing structure. A conductive layer is deposited over the backside of semiconductor substrate, sidewalls of the via opening, and exposed surface of the metal landing structure. The conductive layer is coated with a polymer material, filling the via opening. The polymer material is developed to remove the polymer material from the backside of semiconductor substrate, leaving the via opening filled with undeveloped polymer material. A planar backside surface of semiconductor substrate is formed by removing the conductive layer.

公开(公告)号：US20170247247A1

公开(公告)日：2017-08-31

申请号：US15053456

申请日：2016-02-25

Applicant: Freescale Semiconductor, Inc.

Inventor： Qing Zhang ,  Mohommad Choudhuri ,  Gul Zeb

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81B2201/0214 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/0159 ,  B81C2201/016 ,  B81C2201/019 ,  G01N27/223

Abstract: A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.

公开(公告)号：US10082438B2

公开(公告)日：2018-09-25

申请号：US14700424

申请日：2015-04-30

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Qing Zhang

IPC: G01P15/125 ,  G01L19/00 ,  B81C1/00 ,  G01P15/08

CPC classification number: G01L19/0092 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81C1/00015 ,  G01P15/0802 ,  G01P15/125

Abstract: A method for forming a multi-sensor system includes forming an inertial sensor fixed electrode of an inertial sensor and a movable electrode of a pressure sensor on a first substrate having through silicon vias (TSVs). A second substrate is fusion bonded to a bonding layer on the first substrate. The second substrate and the bonding layer are patterned to form a transducer layer of the inertial sensor and a pressure sensor fixed electrode of the pressure sensor. The first substrate is etched to form a pressure sensor port aligned with the movable electrode.

公开(公告)号：US09704784B1

公开(公告)日：2017-07-11

申请号：US15209964

申请日：2016-07-14

Applicant: Freescale Semiconductor, Inc.

Inventor： Matthieu Lagouge ,  Qing Zhang ,  Mohommad Choudhuri ,  Gul Zeb

IPC: H01L23/48 ,  H01L23/52 ,  H01L21/768 ,  H01L21/288 ,  H01L23/532 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01L23/481 ,  H01L21/2885 ,  H01L21/3065 ,  H01L21/32134 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/53238

Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.