Invention Grant
- Patent Title: Plasma enhanced ALD system
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Application No.: US15033071Application Date: 2014-11-21
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Publication No.: US10351950B2Publication Date: 2019-07-16
- Inventor: Mark Sowa , Robert Kane , Michael Sershen
- Applicant: Ultratech, Inc.
- Applicant Address: US CA San Jose
- Assignee: Ultratech, Inc.
- Current Assignee: Ultratech, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Royse Law Firm, PC
- International Application: PCT/US2014/066916 WO 20141121
- International Announcement: WO2015/080979 WO 20150604
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23C16/455 ; H01J37/32 ; C23C16/50 ; C23C16/52

Abstract:
An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.
Public/Granted literature
- US20160281223A1 PLASMA ENHANCED ALD SYSTEM Public/Granted day:2016-09-29
Information query
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