公开(公告)号：US10351950B2

公开(公告)日：2019-07-16

申请号：US15033071

申请日：2014-11-21

Applicant: Ultratech, Inc.

Inventor： Mark Sowa ,  Robert Kane ,  Michael Sershen

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/52

Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.

公开(公告)号：US20190284689A1

公开(公告)日：2019-09-19

申请号：US16429850

申请日：2019-06-03

Applicant: Ultratech, Inc.

Inventor： Mark Sowa ,  Robert Kane ,  Michael Sershen

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455 ,  H01J37/32

Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.

公开(公告)号：US20170194204A1

公开(公告)日：2017-07-06

申请号：US15323805

申请日：2014-08-27

Applicant: Ultratech, Inc.

Inventor： Mark Sowa

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/528 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/76898 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53238

Abstract: Through via holes are prepared for metallization using ALD and PEALD processing. Each via is coated with a titanium nitride barrier layer having a thickness ranging from 20 to 200 Å. A ruthenium sealing layer is formed over the titanium nitride barrier layer wherein the sealing layer is formed without oxygen to prevent oxidation of the titanium nitride barrier layer. A ruthenium nucleation layer is formed over the sealing layer wherein the nucleation layer is formed with oxygen in order to oxidize carbon during the application of the Ru nucleation layer. The sealing layer is formed by a PEALD method using plasma excited nitrogen radicals instead of oxygen.

公开(公告)号：US20160281223A1

公开(公告)日：2016-09-29

申请号：US15033071

申请日：2014-11-21

Applicant: ULTRATECH, INC.

Inventor： Mark Sowa ,  Robert Kane ,  Michael Sershen

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455

CPC classification number: C23C16/4412 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32834

Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.

Abstract translation: 公开了改进的等离子体增强原子层沉积（PEALD）系统和相关操作方法。 真空反应室包括真空系统，其将来自反应室的第一流出物与包含未反应的第一前体从反应室的第二流出物分离，所述第二流出物包含第二前体和由第二前体与涂层反应的产物的任何反应 表面。 提供陷阱，包括陷阱材料表面，以在第一前体与捕获材料表面反应时从第一流出中去除第一前体。 当第二前体包括等离子体产生的材料时，第二前体不通过捕获器。 交替的第二前体源将合适的第二前体注入到阱中以在沉积表面上完成材料沉积层，从而在下一个材料沉积循环上制备陷阱材料表面以与第一前体反应。