Invention Grant
- Patent Title: Electrode structure for silicon photonics modulator
-
Application No.: US15751714Application Date: 2015-08-11
-
Publication No.: US10353225B2Publication Date: 2019-07-16
- Inventor: Kenichiro Yashiki , Yasuyuki Suzuki
- Applicant: PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
- Applicant Address: JP Tokyo
- Assignee: PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
- Current Assignee: PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- International Application: PCT/JP2015/072747 WO 20150811
- International Announcement: WO2017/026049 WO 20170216
- Main IPC: G02F1/01
- IPC: G02F1/01 ; G02F1/03 ; G02F1/025 ; G02F1/035 ; H04B10/516

Abstract:
The purpose of the present invention is to allow a silicon photonics modulator to be operated at high speed with high frequency by providing an electrode structure for the small multichannel high-density silicon photonics modulator. This electrode structure for a silicon photonics modulator includes, on the planar surface of a silicon substrate, a first layer for forming a plurality of bias electrical wirings, and a second layer formed by aligning each of a plurality of ground electrode portions and each electrical wiring in the first layer.
Public/Granted literature
- US20180231809A1 ELECTRODE STRUCTURE FOR SILICON PHOTONICS MODULATOR Public/Granted day:2018-08-16
Information query