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公开(公告)号：US10535786B2
公开(公告)日：2020-01-14
申请号：US15536533
申请日：2015-12-16
Inventor： Kenichiro Yashiki , Jun Ushida , Masatoshi Tokushima , Kazuhiko Kurata
IPC: H01L31/0232 , G02B6/12 , G02B6/26 , H01L31/107 , G02B6/124
Abstract: Provided is a light receiving element with high light receiving sensitivity.The light receiving element comprises: a light absorbing layer that absorbs light to generate a carrier; and a diffraction element that converts the optical path of first polarized light, which is obliquely incident on a plane formed by the light absorbing layer, so that the first polarized light propagates in a first direction along the light absorbing layer, and that converts the optical path of second polarized light incident from the same direction as the first polarized light so that the second polarized light propagates in a second direction, opposite the first direction, along the light absorbing layer.
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公开(公告)号：US20160266333A1
公开(公告)日：2016-09-15
申请号：US15023351
申请日：2014-10-01
Inventor： Yasuyuki Suzuki , Kenichiro Yashiki , Kazuhiko Kurata
CPC classification number: G02B6/428 , G02B6/12 , G02B6/122 , G02B6/136 , G02B2006/12061 , G02F1/025 , H01L25/065 , H01L25/07 , H01L25/18 , H01L2224/16225
Abstract: A semiconductor integrated circuit that reduces a loss in an electrical signal and a method for manufacturing the semiconductor integrated circuit are provided. The semiconductor integrated circuit comprises a first region on which an optical circuit is to be formed and a second region on which an electrical signal wiring is to be formed. The first region comprises an Si substrate (502), a BOX layer (504) formed on the Si substrate (502), a first SOI layer (506) formed as an optical circuit on the BOX layer (504), and a first SiO2 layer (508) formed on the first SOI layer (506). The second region comprises the Si substrate (502), the BOX layer (504), a second SiO2 layer (508) formed on the BOX layer (504), and an electrical signal wiring (510) formed on the second SiO2 layer (508).
Abstract translation: 提供减少电信号损耗的半导体集成电路和半导体集成电路的制造方法。 半导体集成电路包括要在其上形成光电路的第一区域和要在其上形成电信号布线的第二区域。 第一区域包括Si衬底（502），形成在Si衬底（502）上的BOX层（504），在BOX层（504）上形成为光电路的第一SOI层（506）和第一SiO 2 层（508）形成在第一SOI层（506）上。 第二区域包括Si衬底（502），BOX层（504），形成在BOX层（504）上的第二SiO 2层（508）和形成在第二SiO 2层（508）上的电信号布线 ）。
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公开(公告)号：US09775245B2
公开(公告)日：2017-09-26
申请号：US15128904
申请日：2015-03-18
Inventor： Takeshi Akagawa , Kenichiro Yashiki
CPC classification number: H05K1/111 , G02B6/122 , G02B6/4232 , H01L23/49844 , H01L2224/16225 , H05K1/0219 , H05K1/0243 , H05K1/0245 , H05K1/0251 , H05K1/181 , H05K3/4688 , H05K2201/10121 , H05K2201/10734 , Y02P70/611
Abstract: A pad-array arrangement structure on a substrate for mounting an IC chip on the substrate, wherein a structure with which it is possible to maximally avoid an increase in the number of wiring layers on the substrate is obtained by devising the pad arrangement in an IC pad-array region.A embodiment of the present invention provides a pad-array structure on a substrate for mounting an IC chip on the substrate. The present invention is characterized in that: a plurality of ground pads arrayed equidistantly in a first row, and a plurality of signal pads arrayed equidistantly in a second row on the inside of and parallel to the first row, are provided on a first circumferential edge in the pad-array region; each of the signal pads passes between two adjacent ground pads in the first row and is connected to an external circuit on the substrate; and electrical signals are input to and output from the external circuit.
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4.发明申请OPTICAL TRANSMITTER OR TRANSMISSION UNIT IN OPTICAL TRANSMITTER/RECEIVER PROVIDED ON OPTO-ELECTRIC HYBRID BOARD 有权光电发射机或传输单元在OPTO-ELECTRIC混合板上提供的光发射机/接收机公开(公告)号：US20160164251A1
公开(公告)日：2016-06-09
申请号：US14906880
申请日：2014-07-18
Inventor： Kenichiro Yashiki , Kazuhiko Kurata
CPC classification number: H01S5/0268 , G02B6/12004 , G02B6/125 , G02B6/2813 , G02B6/34 , G02B6/4204 , G02B6/4249 , G02B2006/12142 , G02F1/025 , H01S5/005 , H01S5/0085 , H01S5/02248
Abstract: Provided is a transmission unit for an optical transmitter/receiver or an optical transmitter provided with an optical integrated circuit, characterized in the arrangement of a single-channel or multichannel semiconductor laser and the placement of a plurality of optical waveguides.This present invention is provided with: a semiconductor laser for emitting laser light in a plurality of channels; optical waveguides optically coupled in a corresponding manner to the semiconductor lasers, the optical waveguides propagating laser light as input light for each channel; optical modulators for modulating the input light and generating an optical signal; and an optical signal output unit coupled to the optical modulators, the optical signal output unit outputting the optical signal propagated from the optical modulators to the exterior. The present invention is characterized in that the semiconductor laser is arranged on the opposite side from an optical branching unit and the optical modulators, with the optical signal output unit interposed therebetween, in the plane of an opto-electric hybrid board.
Abstract translation: 提供了一种用于光发射机/接收机或具有光学集成电路的光发射机的发射单元，其特征在于单通道或多通道半导体激光器的布置以及多个光波导的放置。 本发明提供了一种用于在多个通道中发射激光的半导体激光器; 以与半导体激光器相应的方式光学耦合的光波导，光波导传播激光作为每个通道的输入光; 用于调制输入光并产生光信号的光调制器; 以及耦合到光调制器的光信号输出单元，光信号输出单元将从光调制器传播的光信号输出到外部。 本发明的特征在于，半导体激光器配置在与光分路单元相反的一侧，光调制器与光信号输出单元插入在光电混合基板的平面内。
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公开(公告)号：US10353225B2
公开(公告)日：2019-07-16
申请号：US15751714
申请日：2015-08-11
Inventor： Kenichiro Yashiki , Yasuyuki Suzuki
IPC: G02F1/01 , G02F1/03 , G02F1/025 , G02F1/035 , H04B10/516
Abstract: The purpose of the present invention is to allow a silicon photonics modulator to be operated at high speed with high frequency by providing an electrode structure for the small multichannel high-density silicon photonics modulator. This electrode structure for a silicon photonics modulator includes, on the planar surface of a silicon substrate, a first layer for forming a plurality of bias electrical wirings, and a second layer formed by aligning each of a plurality of ground electrode portions and each electrical wiring in the first layer.
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Patent Agency Ranking
公开(公告)号：US09772461B2
公开(公告)日：2017-09-26
申请号：US15023351
申请日：2014-10-01
Inventor： Yasuyuki Suzuki , Kenichiro Yashiki , Kazuhiko Kurata
CPC classification number: G02B6/428 , G02B6/12 , G02B6/122 , G02B6/136 , G02B2006/12061 , G02F1/025 , H01L25/065 , H01L25/07 , H01L25/18 , H01L2224/16225
Abstract: A semiconductor integrated circuit that reduces a loss in an electrical signal and a method for manufacturing the semiconductor integrated circuit are provided. The semiconductor integrated circuit comprises a first region on which an optical circuit is to be formed and a second region on which an electrical signal wiring is to be formed. The first region comprises an Si substrate (502), a BOX layer (504) formed on the Si substrate (502), a first SOI layer (506) formed as an optical circuit on the BOX layer (504), and a first SiO2 layer (508) formed on the first SOI layer (506). The second region comprises the Si substrate (502), the BOX layer (504), a second SiO2 layer (508) formed on the BOX layer (504), and an electrical signal wiring (510) formed on the second SiO2 layer (508).
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7.发明授权Optical transmitter or transmission unit in optical transmitter/receiver provided on opto-electric hybrid board 有权在光电混合板上提供的光发射机/接收机中的光发射机或传输单元公开(公告)号：US09577407B2
公开(公告)日：2017-02-21
申请号：US14906880
申请日：2014-07-18
Inventor： Kenichiro Yashiki , Kazuhiko Kurata
IPC: G02B6/28 , H01S5/026 , G02B6/42 , H01S5/022 , G02B6/125 , G02F1/025 , G02B6/34 , G02B6/12 , H01S5/00
CPC classification number: H01S5/0268 , G02B6/12004 , G02B6/125 , G02B6/2813 , G02B6/34 , G02B6/4204 , G02B6/4249 , G02B2006/12142 , G02F1/025 , H01S5/005 , H01S5/0085 , H01S5/02248
Abstract: This present invention is provided with: a semiconductor laser for emitting laser light in a plurality of channels; optical waveguides optically coupled in a corresponding manner to the semiconductor lasers, the optical waveguides propagating laser light as input light for each channel; optical modulators for modulating the input light and generating an optical signal; and an optical signal output unit coupled to the optical modulators, the optical signal output unit outputting the optical signal propagated from the optical modulators to the exterior. The present invention is characterized in that the semiconductor laser is arranged on the opposite side from an optical branching unit and the optical modulators, with the optical signal output unit interposed therebetween, in the plane of an opto-electric hybrid board.
Abstract translation: 本发明提供了一种用于在多个通道中发射激光的半导体激光器; 以与半导体激光器相应的方式光学耦合的光波导，光波导传播激光作为每个通道的输入光; 用于调制输入光并产生光信号的光调制器; 以及耦合到光调制器的光信号输出单元，光信号输出单元将从光调制器传播的光信号输出到外部。 本发明的特征在于，半导体激光器配置在与光分路单元相反的一侧，光调制器与光信号输出单元插入在光电混合基板的平面内。
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公开(公告)号：US09519115B2
公开(公告)日：2016-12-13
申请号：US14780449
申请日：2014-03-19
Inventor： Kenichiro Yashiki , Masatoshi Tokushima
CPC classification number: G02B6/4207 , G02B6/12004 , G02B6/125 , G02B6/28 , G02B6/305 , G02B6/34 , G02B2006/12123 , G02B2006/12142 , H01S5/0064 , H01S5/0085
Abstract: An optical circuit, wherein the effects of reflected light generated by an optical component are reduced. The optical circuit (100) is provided with an optical branching (110) for branching light, an optical coupler (114) for coupling a first portion of branched light to an optical waveguide (118) for transmission, and an optical reflecting unit (116) for reflecting a second portion of the branched light, the phase difference between the reflected light from the optical coupler (114) and the reflected light from the optical reflecting unit (116) being (2m−1)π (where m is an integer) on an input side of the optical branching (110).
Abstract translation: 一种光学电路，其中减少了由光学部件产生的反射光的影响。 光路100具有用于分光的光分路器110，用于将分支光的第一部分耦合到光波导118以用于传输的光耦合器114和光反射单元116 ），用于反射分支光的第二部分，来自光耦合器（114）的反射光和来自光反射单元（116）的反射光之间的相位差为（2m-1）π（其中m是整数 ）在光分支（110）的输入侧。
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公开(公告)号：US20180231809A1
公开(公告)日：2018-08-16
申请号：US15751714
申请日：2015-08-11
Inventor： Kenichiro Yashiki , Yasuyuki Suzuki
IPC: G02F1/035 , G02F1/03 , G02F1/01 , H04B10/516
CPC classification number: G02F1/0356 , G02F1/011 , G02F1/0121 , G02F1/025 , G02F1/0327 , G02F2201/12 , H04B10/516
Abstract: The purpose of the present invention is to allow a silicon photonics modulator to be operated at high speed with high frequency by providing an electrode structure for the small multichannel high-density silicon photonics modulator. This electrode structure for a silicon photonics modulator includes, on the planar surface of a silicon substrate, a first layer for forming a plurality of bias electrical wirings, and a second layer formed by aligning each of a plurality of ground electrode portions and each electrical wiring in the first layer.
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公开(公告)号：US20170345952A1
公开(公告)日：2017-11-30
申请号：US15536533
申请日：2015-12-16
Inventor： Kenichiro Yashiki , Jun Ushida , Masatoshi Tokushima , Kazuhiko Kurata
IPC: H01L31/0232 , G02B6/12 , H01L31/107
Abstract: Provided is a light receiving element with high light receiving sensitivity.The light receiving element comprises: a light absorbing layer that absorbs light to generate a carrier; and a diffraction element that converts the optical path of first polarized light, which is obliquely incident on a plane formed by the light absorbing layer, so that the first polarized light propagates in a first direction along the light absorbing layer, and that converts the optical path of second polarized light incident from the same direction as the first polarized light so that the second polarized light propagates in a second direction, opposite the first direction, along the light absorbing layer.
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