Invention Grant
- Patent Title: Electrostatic discharge protection device
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Application No.: US15975791Application Date: 2018-05-10
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Publication No.: US10361187B1Publication Date: 2019-07-23
- Inventor: Ruei-Siang Syu , Wen-Chu Lo , Chih-Feng Lin
- Applicant: Maxchip Electronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW107105108A 20180213
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/02 ; H01L29/06 ; H01L29/08 ; H01L27/06 ; H01L29/74

Abstract:
An electrostatic discharge (ESD) protection device including a silicon controlled rectifier and a diode string arranged along a first direction is provided. The silicon controlled rectifier includes an anode and a cathode disposed separately from each other. The anode and the cathode respectively include doped regions. The doped regions in the anode are arranged along a second direction. The doped regions in the cathode are arranged along the second direction. The first direction intersects the second direction.
Public/Granted literature
- US20190252369A1 ELECTROSTATIC DISCHARGE PROTECTION DEVICE Public/Granted day:2019-08-15
Information query
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