公开(公告)号：US20190252369A1

公开(公告)日：2019-08-15

申请号：US15975791

申请日：2018-05-10

Applicant: Maxchip Electronics Corp.

Inventor： Ruei-Siang Syu ,  Wen-Chu Lo ,  Chih-Feng Lin

IPC: H01L27/02 ,  H01L29/06 ,  H01L27/06 ,  H01L29/08

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L27/0292 ,  H01L27/067 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/7436

Abstract: An electrostatic discharge (ESD) protection device including a silicon controlled rectifier and a diode string arranged along a first direction is provided. The silicon controlled rectifier includes an anode and a cathode disposed separately from each other. The anode and the cathode respectively include doped regions. The doped regions in the anode are arranged along a second direction. The doped regions in the cathode are arranged along the second direction. The first direction intersects the second direction.

公开(公告)号：US10361187B1

公开(公告)日：2019-07-23

申请号：US15975791

申请日：2018-05-10

Applicant: Maxchip Electronics Corp.

Inventor： Ruei-Siang Syu ,  Wen-Chu Lo ,  Chih-Feng Lin

IPC: H01L27/00 ,  H01L27/02 ,  H01L29/06 ,  H01L29/08 ,  H01L27/06 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L27/0292 ,  H01L27/067 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/7436

Abstract: An electrostatic discharge (ESD) protection device including a silicon controlled rectifier and a diode string arranged along a first direction is provided. The silicon controlled rectifier includes an anode and a cathode disposed separately from each other. The anode and the cathode respectively include doped regions. The doped regions in the anode are arranged along a second direction. The doped regions in the cathode are arranged along the second direction. The first direction intersects the second direction.