Invention Grant
- Patent Title: Memory management method, memory control circuit unit and memory storage device
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Application No.: US14860722Application Date: 2015-09-22
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Publication No.: US10409525B2Publication Date: 2019-09-10
- Inventor: Kok-Yong Tan
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW104126076A 20150811
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/02

Abstract:
A memory management method for a rewritable non-volatile memory module is provided. The method includes: selecting at least one first physical erasing unit from at least part of physical erasing units according to a first parameter. The method further includes: selecting a second physical erasing unit from the at least one first physical erasing unit according to a second parameter, wherein the second parameter is different from the first parameter; and copying at least part of data stored in the second physical erasing unit to a third physical erasing unit.
Public/Granted literature
- US20170046068A1 MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE Public/Granted day:2017-02-16
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