Invention Grant
- Patent Title: Manufacturing method of aluminium nitride and aluminum nitride prepared by the same
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Application No.: US15164887Application Date: 2016-05-26
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Publication No.: US10442692B2Publication Date: 2019-10-15
- Inventor: Kon-Bae Lee , Jae-Pyoung Ahn , Hae Sung Kim
- Applicant: Alcom , Senus Corp.
- Applicant Address: KR Incheon KR Bucheon
- Assignee: ALCOM,SENUS Corp.
- Current Assignee: ALCOM,SENUS Corp.
- Current Assignee Address: KR Incheon KR Bucheon
- Agency: GW Suh Patent Services
- Priority: KR10-2016-0028867 20160310
- Main IPC: C01B21/072
- IPC: C01B21/072

Abstract:
The present invention relates to a method of manufacturing aluminum nitride and aluminum nitride prepared by the same. Pure aluminum powder having a median particle size (D50) of 1.52 μm was heated to a temperature in a range of 595° C.˜900° C. in a nitrogen containing atmosphere comprising nitrogen and argon gases, at atmospheric pressure for one hour to obtain aluminum nitride with a degree of nitridation exceeding 93%. According to the present invention aluminum nitride may be produced with high yield using a simple and inexpensive one-step heating method in a relatively short period of time.
Public/Granted literature
- US20170260050A1 MANUFACTURING METHOD OF ALUMINIUM NITRIDE AND ALUMINUM NITRIDE PREPARED BY THE SAME Public/Granted day:2017-09-14
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