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公开(公告)号：US10442692B2
公开(公告)日：2019-10-15
申请号：US15164887
申请日：2016-05-26
Applicant: Alcom , Senus Corp.
Inventor： Kon-Bae Lee , Jae-Pyoung Ahn , Hae Sung Kim
IPC: C01B21/072
Abstract: The present invention relates to a method of manufacturing aluminum nitride and aluminum nitride prepared by the same. Pure aluminum powder having a median particle size (D50) of 1.52 μm was heated to a temperature in a range of 595° C.˜900° C. in a nitrogen containing atmosphere comprising nitrogen and argon gases, at atmospheric pressure for one hour to obtain aluminum nitride with a degree of nitridation exceeding 93%. According to the present invention aluminum nitride may be produced with high yield using a simple and inexpensive one-step heating method in a relatively short period of time.
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公开(公告)号：US10094006B2
公开(公告)日：2018-10-09
申请号：US14792503
申请日：2015-07-06
Applicant: Alcom , Senus Corp.
Inventor： Kon-Bae Lee , Jae-Pyoung Ahn , Hae Sung Kim , Hyunjoo Choi
Abstract: The present invention is related to a method of fabricating an aluminum matrix composite by a simple process of heating a mixture of a ceramic reinforcing phase and aluminum in nitrogen containing atmosphere and an aluminum matrix composite fabricated by the same. The aluminum matrix composite may be fabricated by heating to temperatures even lower than the melting temperature of aluminum as well as to temperatures higher. The exothermic nitridation reaction contributes to the melting of the aluminum matrix and the aluminum nitride formed in-situ as a result may act as an additional reinforcing phase.
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公开(公告)号：US20170260050A1
公开(公告)日：2017-09-14
申请号：US15164887
申请日：2016-05-26
Applicant: Alcom , Senus Corp.
Inventor： Kon-Bae Lee , Jae-Pyoung Ahn , Hae Sung Kim
IPC: C01B21/072
CPC classification number: C01B21/0722 , C01P2002/72 , C01P2004/03
Abstract: The present invention relates to a method of manufacturing aluminum nitride and aluminum nitride prepared by the same. Pure aluminum powder having a median particle size (D50) of 1.52 μm was heated to a temperature in a range of 595° C.˜900° C. in a nitrogen containing atmosphere comprising nitrogen and argon gases, at atmospheric pressure for one hour to obtain aluminum nitride with a degree of nitridation exceeding 93%. According to the present invention aluminum nitride may be produced with high yield using a simple and inexpensive one-step heating method in a relatively short period of time.
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