Invention Grant
- Patent Title: Infrared sensor and manufacturing method thereof
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Application No.: US15856925Application Date: 2017-12-28
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Publication No.: US10529876B2Publication Date: 2020-01-07
- Inventor: Feng-Chia Hsu , Shing-Cheng Chang , Peng-Jen Chen , Chung-Yuan Su
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Chutung, Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Chutung, Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW106142271 20171201
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/0236 ; H01L35/32 ; G01J5/00
Abstract:
An infrared sensor including a substrate, an infrared absorption layer and a concave is provided. The infrared absorption layer is formed on a substrate and has a sensing surface. The concave extends toward the substrate from a sensing surface of the infrared absorption layer.
Public/Granted literature
- US20190172958A1 THE INFRARED SENSOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-06-06
Information query
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