Invention Grant
- Patent Title: Semiconductor package having a variable redistribution layer thickness
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Application No.: US16152221Application Date: 2018-10-04
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Publication No.: US10553538B2Publication Date: 2020-02-04
- Inventor: Klaus Jürgen Reingruber , Sven Albers , Christian Georg Geissler , Georg Seidemann , Bernd Waidhas , Thomas Wagner , Marc Dittes
- Applicant: Intel IP Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/528 ; H01L23/498 ; H01L23/00 ; C25D5/02 ; C25D5/10 ; C25D5/48 ; C25D5/54 ; C25D7/12 ; H01L23/522 ; H05K1/02 ; H05K1/11

Abstract:
Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.
Public/Granted literature
- US20190043800A1 SEMICONDUCTOR PACKAGE HAVING A VARIABLE REDISTRIBUTION LAYER THICKNESS Public/Granted day:2019-02-07
Information query
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