Invention Grant
- Patent Title: Silicon electron emitter designs
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Application No.: US16153103Application Date: 2018-10-05
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Publication No.: US10607806B2Publication Date: 2020-03-31
- Inventor: Frances Hill , Gildardo R. Delgado , Rudy F. Garcia , Michael E. Romero , Katerina Ioakeimidi
- Applicant: KLA-TENCOR CORPORATION
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Hodgson Russ LLP
- Main IPC: H01J1/304
- IPC: H01J1/304 ; H01J37/073 ; H01J37/26 ; G02B27/09 ; H01J40/06 ; H01J40/18 ; H01J19/24 ; H01J37/06 ; H01J37/28 ; H01J1/34 ; H01L21/67

Abstract:
Electron source designs are disclosed. The emitter structure, which may be silicon, has a layer on it. The layer may be graphene or a photoemissive material, such as an alkali halide. An additional layer between the emitter structure and the layer or a protective layer on the layer can be included. Methods of operation and methods of manufacturing also are disclosed.
Public/Granted literature
- US20190108963A1 SILICON ELECTRON EMITTER DESIGNS Public/Granted day:2019-04-11
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