Invention Grant
- Patent Title: Method of forming superconducting apparatus including superconducting layers and traces
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Application No.: US15715521Application Date: 2017-09-26
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Publication No.: US10651362B2Publication Date: 2020-05-12
- Inventor: Richard P. Rouse , David B. Tuckerman
- Applicant: Microsoft Technology Licensing, LLC
- Applicant Address: US WA Redmond
- Assignee: Microsoft Technology Licensing, LLC
- Current Assignee: Microsoft Technology Licensing, LLC
- Current Assignee Address: US WA Redmond
- Agency: Singh Law, PLLC
- Agent Ranjeev Singh
- Main IPC: H01L39/24
- IPC: H01L39/24 ; H01L39/12 ; H01L39/02 ; H01L23/498 ; H01L21/768 ; H01L23/532 ; H01L21/48 ; H05K3/46 ; B82Y10/00 ; B05D1/00 ; B05D5/12 ; B05D7/00 ; B82Y40/00

Abstract:
Methods and structures corresponding to superconducting apparatus including superconducting layers and traces are provided. A method for forming a superconducting apparatus includes forming a first dielectric layer on a substrate by depositing a first dielectric material on the substrate and curing the first dielectric material at a first temperature. The method further includes forming a first superconducting layer comprising a first set of patterned superconducting traces on the first dielectric layer. The method further includes forming a second dielectric layer on the first superconducting layer by depositing a second dielectric material on the first superconducting layer and curing the second dielectric material at a second temperature, where the second temperature is lower than the first temperature. The method further includes forming a second superconducting layer comprising a second set of patterned superconducting traces on the second dielectric layer.
Public/Granted literature
- US20190097118A1 SUPERCONDUCTING APPARATUS INCLUDING SUPERCONDUCTING LAYERS AND TRACES Public/Granted day:2019-03-28
Information query
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