Invention Grant
- Patent Title: Enhanced high aspect ratio etch performance using accelerated neutral beams derived from gas-cluster ion beams
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Application No.: US16008573Application Date: 2018-06-14
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Publication No.: US10670960B2Publication Date: 2020-06-02
- Inventor: Sean R. Kirkpatrick , Kiet A. Chau , Son T. Chau
- Applicant: Exogenesis Corporation
- Applicant Address: US MA Billerica
- Assignee: Exogenesis Corporation
- Current Assignee: Exogenesis Corporation
- Current Assignee Address: US MA Billerica
- Agency: Burns & Levinson LLP
- Agent Jerry Cohen
- Main IPC: H01J37/00
- IPC: H01J37/00 ; G03F1/80 ; H01J37/317 ; H01L21/311 ; H01L21/265 ; H01L21/02 ; G03F1/82 ; H05H3/02 ; H01J37/147 ; H01J37/05 ; H01J37/32 ; H01L29/36 ; B24B37/04
Abstract:
A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.
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