Invention Grant
- Patent Title: Material composition and methods thereof
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Application No.: US15628355Application Date: 2017-06-20
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Publication No.: US10672619B2Publication Date: 2020-06-02
- Inventor: Siao-Shan Wang , Cheng-Han Wu , Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/308 ; G03F7/40 ; G03F7/26

Abstract:
Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.
Public/Granted literature
- US20180174830A1 MATERIAL COMPOSITION AND METHODS THEREOF Public/Granted day:2018-06-21
Information query
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