Invention Grant
- Patent Title: Foundry-agnostic post-processing method for a wafer
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Application No.: US16403317Application Date: 2019-05-03
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Publication No.: US10679888B2Publication Date: 2020-06-09
- Inventor: Mary A. Teshiba , John J. Drab
- Applicant: RAYTHEON COMPANY
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: Cantor Colburn LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/20

Abstract:
A foundry-agnostic post-processing method for a wafer is provided. The wafer includes an active surface, a substrate and an intermediate layer interposed between the active surface and the substrate. The method includes removing the wafer from an output yield of a wafer processing foundry, thinning the substrate to the intermediate layer or within microns of the intermediate layer to expose a new surface and bonding the new surface to an alternate material substrate which provides for enhanced device performance as compared to the substrate.
Public/Granted literature
- US20190259653A1 FOUNDRY-AGNOSTIC POST-PROCESSING METHOD FOR A WAFER Public/Granted day:2019-08-22
Information query
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