Invention Grant
- Patent Title: Dual cathode ion source
-
Application No.: US16554893Application Date: 2019-08-29
-
Publication No.: US10741361B2Publication Date: 2020-08-11
- Inventor: Bon-Woong Koo , Jun Lu , Frank Sinclair , Eric D. Hermanson , Joseph E. Pierro , Michael D. Johnson , Michael S. DeLucia , Antonella Cucchetti
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Agency: Nields, Lemack & Frame, LLC
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J27/08 ; H01J1/50 ; H01J37/08

Abstract:
An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.
Public/Granted literature
- US20190385811A1 Dual Cathode Ion Source Public/Granted day:2019-12-19
Information query