Invention Grant
- Patent Title: Material composition and methods thereof
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Application No.: US15726040Application Date: 2017-10-05
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Publication No.: US10741410B2Publication Date: 2020-08-11
- Inventor: An-Ren Zi , Joy Cheng , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; C08F12/08 ; G03F7/025 ; G03F7/027 ; G03F7/075 ; G03F7/004 ; G03F7/038 ; G03F7/029 ; G03F7/09 ; G03F7/033 ; C08K5/00 ; C08K3/011

Abstract:
Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a metal complex including a radical generator, an organic core, and an organic solvent. By way of example, the organic core includes at least one cross-linker site. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.
Public/Granted literature
- US20180315617A1 MATERIAL COMPOSITION AND METHODS THEREOF Public/Granted day:2018-11-01
Information query
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