公开(公告)号：US11300878B2

公开(公告)日：2022-04-12

申请号：US15938599

申请日：2018-03-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Joy Cheng

IPC: G03F7/32 ,  G03F7/004 ,  H01L21/47 ,  H01L21/027 ,  G03F7/038

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15 pKa>9.5; and a chelate.

公开(公告)号：US20200319565A1

公开(公告)日：2020-10-08

申请号：US16905167

申请日：2020-06-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Joy Cheng

IPC: G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  G03F7/06 ,  G03F7/16 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.

公开(公告)号：US20200152468A1

公开(公告)日：2020-05-14

申请号：US16725120

申请日：2019-12-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Wei Wang ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/288 ,  H01L21/3213

Abstract: A method includes forming a metal-containing material layer over a substrate, patterning the metal-containing material layer, where the patterned material layer has an average roughness, and electrochemically treating the patterned metal-containing material layer to reduce the average roughness. The treatment may be implemented by exposing the patterned metal-containing material layer to an electrically conducting solution and applying a potential between the patterned material layer and a counter electrode exposed to the solution, such that the treating reduces the average roughness of the patterned material layer. The electrically conducting solution may include an ionic compound dissolved in water, alcohol, and/or a surfactant.

公开(公告)号：US20190384173A1

公开(公告)日：2019-12-19

申请号：US16009795

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

公开(公告)号：US10274847B2

公开(公告)日：2019-04-30

申请号：US15708800

申请日：2017-09-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Joy Cheng

IPC: G03F7/20 ,  G03F7/16 ,  H01L21/027 ,  G03F7/32 ,  G03F7/039 ,  G03F7/038 ,  G03F7/38 ,  G03F7/40 ,  G03F7/30 ,  G03F7/06

Abstract: A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.

公开(公告)号：US20190094716A1

公开(公告)日：2019-03-28

申请号：US16202860

申请日：2018-11-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Joy Cheng

IPC: G03F7/20 ,  G03F7/038 ,  H01L21/027 ,  G03F7/039 ,  G03F7/06 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  G03F7/30 ,  G03F7/38

Abstract: A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.

公开(公告)号：US20190086818A1

公开(公告)日：2019-03-21

申请号：US15708800

申请日：2017-09-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Joy Cheng

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  G03F7/32 ,  G03F7/039 ,  G03F7/038 ,  H01L21/027

Abstract: A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.

公开(公告)号：US20180039182A1

公开(公告)日：2018-02-08

申请号：US15351529

申请日：2016-11-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/40 ,  H01L21/02 ,  G03F7/16 ,  B08B3/02 ,  G03F7/20 ,  G03F7/32 ,  G03F7/095 ,  C11D11/00 ,  H01L21/027 ,  G03F7/38

CPC classification number: G03F7/40 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/168 ,  G03F7/3057 ,  G03F7/38 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/0274 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US09684236B1

公开(公告)日：2017-06-20

申请号：US15073073

申请日：2016-03-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ken-Hsien Hsieh ,  Kuan-Hsin Lo ,  Shih-Ming Chang ,  Wei-Liang Lin ,  Joy Cheng ,  Chun-Kuang Chen ,  Ching-Yu Chang ,  Kuei-Shun Chen ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Chin-Hsiang Lin

IPC: G03F7/11 ,  G03F7/40 ,  G03F7/00 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  G03F7/20 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/3065

CPC classification number: G03F7/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/165 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3086

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a first patterned hard mask over a material layer. The first patterned hard mask defines an opening. The method also includes forming a direct-self-assembly (DSA) layer having a first portion and a second portion within the opening, removing the first portion of the DSA layer, forming spacers along sidewalls of the second portion of the DSA layer and removing the second portion of the DSA layer. The spacers form a second patterned hard mask over the material layer.

公开(公告)号：US20240377735A1

公开(公告)日：2024-11-14

申请号：US18783765

申请日：2024-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.