Invention Grant
- Patent Title: Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
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Application No.: US16246634Application Date: 2019-01-14
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Publication No.: US10825685B2Publication Date: 2020-11-03
- Inventor: Sean R. Kirkpatrick , Allen R. Kirkpatrick , Michael J. Walsh , Richard C. Svrluga
- Applicant: Exogenesis Corporation
- Applicant Address: US MA Billerica
- Assignee: Exogenesis Corporation
- Current Assignee: Exogenesis Corporation
- Current Assignee Address: US MA Billerica
- Agency: Burns & Levinson LLP
- Agent Jerry Cohen
- Main IPC: H01J37/05
- IPC: H01J37/05 ; H01L21/02 ; H01L21/265 ; H01L21/311 ; H01L21/321 ; C03C23/00 ; H01J37/08 ; H01J37/317 ; H01J37/147 ; H01L29/167 ; H01L29/36 ; H01L21/324
Abstract:
A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.
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