Invention Grant
- Patent Title: Method of forming nanocrystalline graphene, and device including nanocrystalline graphene
-
Application No.: US16233513Application Date: 2018-12-27
-
Publication No.: US10850985B2Publication Date: 2020-12-01
- Inventor: Alum Jung , Keunwook Shin , Kyung-Eun Byun , Hyeonjin Shin , Hyunseok Lim , Seunggeol Nam , Hyunjae Song , Yeonchoo Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0090903 20180803
- Main IPC: H01L29/12
- IPC: H01L29/12 ; C01B32/186 ; C23C16/26 ; C23C16/505 ; C23C16/511 ; H01L21/02 ; H01L29/16 ; H01L29/06 ; H01L29/04
Abstract:
A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.
Public/Granted literature
- US20200039827A1 METHOD OF FORMING NANOCRYSTALLINE GRAPHENE, AND DEVICE INCLUDING NANOCRYSTALLINE GRAPHENE Public/Granted day:2020-02-06
Information query
IPC分类:
