Invention Grant
- Patent Title: Micro semiconductor structure
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Application No.: US16436333Application Date: 2019-06-10
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Publication No.: US10937826B2Publication Date: 2021-03-02
- Inventor: Ying-Tsang Liu , Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Yu-Chu Li , Huan-Pu Chang , Tzu-Yang Lin , Yu-Hung Lai
- Applicant: PlayNitride Display Co., Ltd.
- Applicant Address: TW Miaoli County
- Assignee: PlayNitride Display Co., Ltd.
- Current Assignee: PlayNitride Display Co., Ltd.
- Current Assignee Address: TW Miaoli County
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW107143456A 20181204
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/36

Abstract:
A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.
Public/Granted literature
- US20200176509A1 MICRO SEMICONDUCTOR STRUCTURE Public/Granted day:2020-06-04
Information query
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