Invention Grant
- Patent Title: Field ionization source, ion beam apparatus, and beam irradiation method
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Application No.: US16074601Application Date: 2016-02-05
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Publication No.: US10971329B2Publication Date: 2021-04-06
- Inventor: Shinichi Matsubara , Hiroyasu Shichi , Tomihiro Hashizume , Yoshimi Kawanami
- Applicant: HITACHI HIGH-TECH CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- International Application: PCT/JP2016/053507 WO 20160205
- International Announcement: WO2017/134817 WO 20170810
- Main IPC: H01J37/285
- IPC: H01J37/285 ; H01J37/08 ; G02B21/00 ; H01J27/02

Abstract:
An H3+ ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H3+ ion can be obtained by use of a probe current within a voltage range 21 around a second peak 23 occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.
Public/Granted literature
- US20190051491A1 FIELD IONIZATION SOURCE, ION BEAM APPARATUS, AND BEAM IRRADIATION METHOD Public/Granted day:2019-02-14
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